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| KSD1222 KSD1222 Power Amplifier Applications * * * * * High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 60 40 5 3 0.3 15 1 150 - 55 ~ 150 Units V V V A A W W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Test Condition IC = 25mA, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 3A IC = 2A, IB = 4mA IC = 2A, IB = 4mA VCC = 30V, IC = 3A IB1 = -IB2 = 6mA RL = 10 0.1 1 0.2 2000 1000 1.5 2 V V s s s Min. 40 Typ. Max. 20 2.5 Units V A mA (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSD1222 Typical Characteristics 5 10000 VCE = 2V IC[A], COLLECTOR CURRENT 4 3 IB =300 A 2 275 A 250A 225 A 200A hFE, DC CURRENT GAIN 5 1000 1 IB = 175A IB = 0 0 0 1 2 3 4 100 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 4 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 500IB VCE=2V IC[A], COLLECTOR CURRENT 3 VBE(sat) VCE(sat) 1 2 1 0.1 0.1 1 10 0 0.0 0.8 1.6 2.4 3.2 IC[A], COLLECTOR CURRENT VBE[V], BASE EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 IC MAX. (PULSE) IC MAX. (DC) 10ms DC 1 20 1ms IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 100 15 10 0.1 VCEO MAX. 5 0.01 1 10 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSD1222 Package Demensions I-PAK 6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20 0.20 0.20 0.60 0.70 0.10 6.10 0.20 0.80 0.20 1.80 MAX0.96 0.76 0.10 9.30 0.30 2.30TYP [2.300.20] 2.30TYP [2.300.20] 0.50 0.10 (c)2001 Fairchild Semiconductor Corporation 16.10 0.30 Dimensions in Millimeters Rev. A1, January 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H2 |
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